Investigation of pentacene growth on SiO2gate insulator after photolithography for nitrogen-doped LaB6bottom-contact electrode formation
| Autor: | Mizuha Hiroki, Yasutaka Maeda, Shun-ichiro Ohmi |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Electron mobility Organic field-effect transistor Materials science Physics and Astronomy (miscellaneous) business.industry General Engineering General Physics and Astronomy 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention Pentacene Crystallinity chemistry.chemical_compound Resist chemistry law Sputtering 0103 physical sciences Electrode Optoelectronics Photolithography 0210 nano-technology business |
| Zdroj: | Japanese Journal of Applied Physics. 57:04FL13 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | Nitrogen-doped (N-doped) LaB6 is a candidate material for the bottom-contact electrode of n-type organic field-effect transistors (OFETs). However, the formation of a N-doped LaB6 electrode affects the surface morphology of a pentacene film. In this study, the effects of surface treatments and a N-doped LaB6 interfacial layer (IL) were investigated to improve the pentacene film quality after N-doped LaB6 electrode patterning with diluted HNO3, followed by resist stripping with acetone and methanol. It was found that the sputtering damage during N-doped LaB6 deposition on a SiO2 gate insulator degraded the crystallinity of pentacene. The H2SO4 and H2O2 (SPM) and diluted HF treatments removed the damaged layer on the SiO2 gate insulator surface. Furthermore, the N-doped LaB6 IL improved the crystallinity of pentacene and realized dendritic grain growth. Owing to these surface treatments, the hole mobility improved from 2.8 × 10−3 to 0.11 cm2/(Vs), and a steep subthreshold swing of 78 mV/dec for the OFET with top-contact configuration was realized in air even after bottom-contact electrode patterning. |
| Databáze: | OpenAIRE |
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