Analysis and comparison of n-AlxGa1−xAs/GaAs QWIPs with different device structures and optical coupling

Autor:	W. E. Zhang, Ziqiang Zhu, Dayuan Xiong, Fangmin Guo
Rok vydání:	2009
Předmět:	Coupling Materials science business.industry Physics::Optics Photodetector Optical field Grating Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Responsivity Optics Scattering-matrix method Reactive-ion etching business Quantum well
Zdroj:	Infrared Physics & Technology. 52:276-280
ISSN:	1350-4495
DOI:	10.1016/j.infrared.2009.05.014
Popis:	This paper discusses optical coupling for n-GaAs/AlGaAs multiple quantum well infrared photodetectors (MQWIPs). The optical responsivity has been compared with different grating structures fabricated by reactive ion etching (RIE), device form, and incidence mode. The optical coupling efficiencies are further analyzed by the modal expansion model (MEM), including optical field distributions in different size photosensitive element and interrelated influences with scattering matrix method based on plane-wave expansion (PWE). Some extra coupling parameters have been obtained in designing and optimizing QWIPs FPA.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a59235d854070b24626fc9ff869441f9 https://doi.org/10.1016/j.infrared.2009.05.014 Zobrazit plný text záznamu Full Text from ScienceDirect