Monte Carlo Simulation of Electron Transport in Ga0.47In0.53As

Autor:	F. M. Abou El‐Ela, N. T. Mokhtar
Rok vydání:	2007
Předmět:	Condensed Matter::Materials Science Electron mobility Drift velocity Field (physics) Condensed matter physics Chemistry Scattering Phonon Monte Carlo method Polar Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electron transport chain
Zdroj:	AIP Conference Proceedings.
ISSN:	0094-243X
DOI:	10.1063/1.2711097
Popis:	Monte Carlo simulation of electron transport in Ga0.53In0.47 As has been performed for three valley conduction band model. Scattering Sources include polar optical phonons, non‐polar intervalley phonons, non‐polar acoustic phonons, charged impurity and random potential alloy. A negative differential mobility is observed at field of about 5.0 × 105 v/m. Ga0.53In0.47 As exhibits higher low‐field drift mobility and a higher peak electron drift velocity than both GaAs and InP.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a58b374fdd438ce6440c1d8fa3f85e47 https://doi.org/10.1063/1.2711097 Zobrazit plný text záznamu