Growth and characterization of a novel low-voltage-tunneling electroluminescent device
| Autor: | R. Martinelli, Christopher J. Summers, B. K. Wagner, W. Tong, N. Yocom, H. Menkara, M. Chaimansour, M. Ling |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
Condensed Matter::Other business.industry Insulator (electricity) Electroluminescence Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Threshold voltage Condensed Matter::Materials Science Semiconductor Optoelectronics Electrical and Electronic Engineering Thin film business Low voltage Quantum tunnelling |
| Zdroj: | Journal of the Society for Information Display. 6:23 |
| ISSN: | 1071-0922 |
| DOI: | 10.1889/1.1985200 |
| Popis: | A new electroluminescent device concept is proposed to achieve low-voltage operation. The device is based on a lattice-matched semiconductor/insulator/luminescent layer/insulator/semiconductor structure in which, under bias, high-energy electrons are injected from the semiconductor into the electroluminescent layer. Details of the chemical-beam epitaxy/molecular-beam epitaxy (CBE/MBE) growth procedures for each of the layers required for this device structure are presented. Theoretical models were developed to simulate the device band diagrams and the tunneling process. Preliminary results indicate good agreement between the model and actual device operations in threshold voltage and I-V behaviors. |
| Databáze: | OpenAIRE |
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