The Influence of Integrated Resistors Formed under Ion Irradiation on the Superconducting Transitions of Niobium Nitride Nanoconductors
| Autor: | L. V. Kutuzov, B. V. Goncharov, E. D. Ol’shanskii, D. A. Komarov, K. E. Prikhod’ko, M. M. Dement’eva, V. L. Stolyarov, B. A. Gurovich, A. G. Domantovskii |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Superconductivity Resistive touchscreen Niobium nitride Materials science Physics and Astronomy (miscellaneous) Silicon business.industry Nanowire chemistry.chemical_element 01 natural sciences 010305 fluids & plasmas law.invention chemistry.chemical_compound chemistry law 0103 physical sciences Sapphire Optoelectronics Resistor Silicon oxide business |
| Zdroj: | Technical Physics. 65:1777-1779 |
| ISSN: | 1090-6525 1063-7842 |
| DOI: | 10.1134/s1063784220110146 |
| Popis: | The influence of integrated resistors formed under irradiation in a nanowire on its superconducting transitions has been investigated. Niobium nitride nanowires with widths of 75–20 000 nm fabricated from a 5-nm-thick NbN film on single-crystal silicon substrates coated with a 0.3-μm-thick thermal silicon oxide layer and on sapphire substrates have been considered. The influence of a built-in resistive region on the critical current of transition from the superconducting to normal state is described. |
| Databáze: | OpenAIRE |
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