Influence of a-Si: H / c-Si Interface Properties on Performance of Hetero-Junction Back Contact Si Solar Cells
| Autor: | Okamoto, C., Asano, N., Hieda, T., Nakamura, J., Suganuma, R., Tadokoro, H., Kobayashi, M., Matsumoto, Y., Nakamura, K. |
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| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20142014-2av.2.62 |
| Popis: | 29th European Photovoltaic Solar Energy Conference and Exhibition; 959-961 The purpose of this work is to investigate the passivation effect of hydrogenated amorphous silicon (a-Si:H) deposited on crystalline silicon (c-Si) by PECVD changing with a hydrogen dilution ratio and an applied RF power. We also applied this work to high efficiency Hetero-Junction Back Contact Si Solar Cells (HBC) cell. We evaluated the passivation quality of a-Si:H both on flat structure (100) and on textured structure (111) Cz wafer surface, where the minority career lifetime was measured by -PCD technique. The results show that the passivation ability on flat structure (100) surface had strong dependence on a H2/SiH4 ratio and a RF power, on the other hand, less dependence was shown on textured surface (111). The Transmission electron microscope (TEM) observation of a-Si:H demonstrates that crystal grains were formed in a-Si:H film for worse passivation. It was found that a-Si:H is more easily to crystallize on flat structure (100) surface than on textured surface (111). We utilized these findings to achieve 24.9% efficiency by HBC structure cell. |
| Databáze: | OpenAIRE |
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