Low-Pressure Deposition of TiN Thin Films from a Tetrakis(dimethylamido)titanium Precursor

Autor:	J. S. Corneille, P. J. Chen, D. W. Goodman, W. S. Oh, Charles M. Truong
Rok vydání:	1995
Předmět:	Chemistry Kinetics Inorganic chemistry General Engineering chemistry.chemical_element equipment and supplies chemistry.chemical_compound Tin thin films Torr Reagent Deposition (phase transition) Physical and Theoretical Chemistry Tin Tetrakis(dimethylamido)titanium Titanium
Zdroj:	The Journal of Physical Chemistry. 99:8831-8842
ISSN:	1541-5740 0022-3654
DOI:	10.1021/j100021a059
Popis:	We demonstrate that, at low reagent pressures Torr), the prevalent TiN film deposition mechanism operates exclusively on the reactions between tetrakis(dimethy1amido)titanium (TDMAT) and NH3 at the growth surface. Our surface spectroscopic analyses indicate that film deposition in the low-pressure regime is also capable of delivering TiN with very low residual carbon levels. Spectroscopic evidence supporting this surface-reaction pathway to TiN films is presented in this report. The kinetics of the reactions between TDMAT and N H 3 on TiN surfaces are also explored. In addition, we also discuss a proposed mechanistic framework for this low-pressure deposition process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a567441e39ce64180704da5ce65709bc https://doi.org/10.1021/j100021a059 Zobrazit plný text záznamu