Field emission properties of Si layers deposited on W tip

Autor:	N.N. Chubun, B.Ch. Djubua, V.N. Shrednik, O.L. Golubev
Rok vydání:	2002
Předmět:	Monatomic gas Materials science Condensed matter physics Field (physics) Silicon Analytical chemistry chemistry.chemical_element Tungsten Cathode law.invention Field electron emission chemistry law Electron microscope Layer (electronics)
Zdroj:	9th International Vacuum Microelectronics Conference.
DOI:	10.1109/ivmc.1996.601799
Popis:	Field electron microscope was used for investigation of change of Si deposit on W tip as result of action of some field emission current. Two kinds of deposit have been prepared: 10 monoatomic layers on the W tip deposited at room temperature and the same layer of Si on the top deposited at 620 K. Then field emission current of a certain value took place for a certain time. Changes in field emission images of the deposit and in emission parameters of the surface have been observed and registered. The results of such treatment of the surface and of measuring are presented and discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a563014b26a1f40e7c4964a96f873ade https://doi.org/10.1109/ivmc.1996.601799 Zobrazit plný text záznamu