Defect related photoluminescence of SiGe/Si heterostructures grown by APCVD
| Autor: | K. Grimm, J.L. Shi, C.C.G. Visser, Lis K. Nanver |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Photoluminescence
Chemistry Relaxation (NMR) Metals and Alloys Analytical chemistry Mineralogy Heterojunction Surfaces and Interfaces Crystallographic defect Surfaces Coatings and Films Electronic Optical and Magnetic Materials Etching (microfabrication) Microscopy Materials Chemistry Dislocation Spectroscopy |
| Zdroj: | Thin Solid Films. 364:254-258 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(99)00905-0 |
| Popis: | Heterostructures of Si12xGex/Si with Ge content x from 14 to 67%, grown on Si by atmospheric pressure chemical vapor deposition (APCVD) at 650 or 7008C, have been studied by photoluminescence (PL) spectroscopy, Normarski microscopy after Schimmel etching, atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). For SiGe grown by APCVD with a low Ge content (,40%), strain relaxation is achieved by misfit dislocation formation. For high Ge content (.40%), the relaxation mode is influenced by the deposition temperature, where the energetically most favorable mechanism will dominate. At 7008C, the SiGe is relaxed by 3D island formation and the PL alloy band can be correlated to island structuring of the surface. At 6508C, the SiGe is relaxed by misfit dislocations due to the increased density of born-in point defects at low temperatures. q 2000 Elsevier Science S.A. All rights reserved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect