Double pentavalent (Sb5+, Nb5+) and trivalent (Sm3+, Y3+) co-doped Ti0.9Zr0.1O2 colossal dielectric permittivity multilayer ceramics for the miniaturization of the next-generation electronics
| Autor: | Zhilun Lu, Wenlong Zou, Ge Wang, Lei Zhang, Ergang Yao, Dawei Wang, Fengqi Zhao, Linghang Wang, Tianle Hu, Siyu Xu, Jinglei Li |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Tape casting Materials science Brookite business.industry Process Chemistry and Technology 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Tetragonal crystal system visual_art 0103 physical sciences Materials Chemistry Ceramics and Composites visual_art.visual_art_medium Miniaturization Optoelectronics Orthorhombic crystal system Ceramic 0210 nano-technology business Porosity |
| Zdroj: | Ceramics International. 46:23433-23441 |
| ISSN: | 0272-8842 |
| DOI: | 10.1016/j.ceramint.2020.06.113 |
| Popis: | Materials with colossal dielectric permittivity (CP) are in the focus of interest for the development of miniaturization and integration of electronic components. Despite the extensive study of these new classes of co-doped TiO2 CP materials, the preparation of multilayer ceramics using this kind of CP materials is still challenging work. Here, we synthesize a series of (Sb5+, Nb5+) and (Sm3+, Y3+) co-doped Ti0.9Zr0.1O2 ceramics (SNSYTZO) through the conventional solid-state reaction method. XRD spectrum identifies that ceramics under x = 0.04 show a perfect rutile phase with the tetragonal crystal structure; however, minor brookite orthorhombic crystal structure appears when x > 0.04. FESEM images show the prepared ceramics have excellent densification and low porosity. Dielectric, modulus, and impedance spectrum are systematically explored the underlying CP mechanism and compared with each other to find the optimal materials composition to prepare further multilayer ceramics, which is fabricated by the industrial tape casting method. FESEM, together with surface element mapping, indicates that all doping elements are homogeneously distributed. Also, we investigate the dielectric response without/with DC bias. This work sheds light on a promising feasible route to prepare the miniaturization of the next-generation electronics via a large scale industrial tape casting method. |
| Databáze: | OpenAIRE |
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