Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP

Autor:	A. Ginudi, Christian Guillemot, A. Le Corre, Claude Vaudry, D. Lecrosnier, Slimane Loualiche, L. Henry
Rok vydání:	1989
Předmět:	Electron mobility Materials science Physics and Astronomy (miscellaneous) business.industry Transistor Analytical chemistry Schottky diode Heterojunction High-electron-mobility transistor law.invention Semiconductor law Optoelectronics Field-effect transistor business Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 55:2099-2101
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.102075
Popis:	GaInP material has been used as a high‐gap semiconductor on InP to fabricate Schottky diodes. The experimental results show that the devices exhibit good electrical properties when the ternary strained layer is below the critical thickness. The best device is obtained with a gallium composition of 100% and a GaP thickness of 11 A, and exhibits a barrier height of 0.8 eV, an ideality factor of 1.1, and a reverse current of 0.1 nA at −1 V. A high electron mobility transistor has been fabricated on an InP substrate by molecular beam epitaxy using a high‐gap GaInP material, and a transconductance of 300 mS/mm has been measured on a device of 1.3 μm gate length.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a5396390da1c88791b695a42a16b373e https://doi.org/10.1063/1.102075 Zobrazit plný text záznamu