3D TSV based high frequency components for RF IC and RF MEMS applications
| Autor: | Peter Ramm, Ilja Ocket, Adrian M. Ionescu, Amin Enayati, Josef Weber, Armin Klumpp, Mariazel Maqueda Lopez, Wolfgang A. Vitale, Reinhard Merkel, Walter De Raedt, Montserrat Fernandez-Bolanos |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Microelectromechanical systems
Materials science Silicon chemistry.chemical_element 020206 networking & telecommunications 02 engineering and technology 021001 nanoscience & nanotechnology Inductor Resonator chemistry CMOS 0202 electrical engineering electronic engineering information engineering Electronic engineering Figure of merit Radio frequency Wideband 0210 nano-technology |
| Zdroj: | 3DIC |
| DOI: | 10.1109/3dic.2016.7970030 |
| Popis: | We demonstrate and review the unique fine-pitch high-aspect ratio tungsten-filled through-silicon vias (W-TSVs) technology developed by Fraunhofer EMFT in high-resitivity silicon substrates. The proposed process flow is fully compatible with both CMOS and MEMS technology, allowing 3D heterogeneous integration of highperformance, low power, compact tunable RF front-ends. We have assessed the figures of merit of the technology for RF functionality by fabricating and characterizing different configurations for CPWs with TSV transitions, mm-wave antennas and LC resonators as well as record-high performance wideband out-of-plane micro-inductors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|