Demonstration of a III–Nitride/Silicon Tandem Solar Cell

Autor:	Wladek Walukiewicz, Iulian Gherasoiu, Vincent M. Kao, Kin Man Yu, Joel W. Ager, Lothar A. Reichertz
Rok vydání:	2009
Předmět:	Materials science Silicon business.industry Open-circuit voltage Photovoltaic system General Engineering General Physics and Astronomy chemistry.chemical_element Nitride Polymer solar cell law.invention chemistry law Solar cell Optoelectronics Wafer business Molecular beam epitaxy
Zdroj:	Applied Physics Express. 2:122202
ISSN:	1882-0786 1882-0778
DOI:	10.1143/apex.2.122202
Popis:	We report on the proof of principle of a III–nitride/silicon tandem solar cell. Photovoltaic activity is demonstrated in a 0.25 cm2 dual junction solar cell, made of p- and n-type GaN layers which were grown by molecular beam epitaxy (MBE) on a standard n-type Si wafer with an Al doped p-type surface. An open circuit voltage (Voc) of 2.4 V was measured under 1× sun AM1.5G condition with additional UV laser illumination of the GaN junction. Experiments under various illumination conditions were performed to verify that both junctions are active and working in series.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a52cadce2b4f3503c74cb3b19089274a https://doi.org/10.1143/apex.2.122202 Zobrazit plný text záznamu