The effects of 12MeV electron irradiation on the electrical characteristics of the Au/Aniline blue/p-Si/Al device
| Autor: | Abdulmecit Türüt, Ümit Incekara, Sakir Aydogan |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Dopant Equivalent series resistance business.industry Analytical chemistry Condensed Matter Physics Fluence Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Metal Semiconductor Ionization visual_art Electron beam processing visual_art.visual_art_medium Electrical and Electronic Engineering Atomic physics Safety Risk Reliability and Quality business Diode |
| Zdroj: | Microelectronics Reliability. 51:2216-2222 |
| ISSN: | 0026-2714 |
| Popis: | An Au/Aniline blue (AB)/p-Si/Al structure has been fabricated and then the effect of electron irradiation (12 MeV electron energy and 5 × 1012 e− cm−2 fluence) on the contact parameters of the device has been analysed by using the current–voltage (I–V), capacitance–voltage (C–V), and conductance–voltage (G/w–V) measurements, at room temperature. Since the organic layer creates a physical barrier between the metal and the semiconductor, it has been seen that the AB layer causes an increase in the effective barrier height of the device. Cheung functions, Norde model and conductance method have been used in order to determine the diode parameters. The values of the ideality factor, barrier height and series resistance increased after the electron irradiation. This has been attributed to a decrease in the net ionized dopant concentration that occurred as a result of electron irradiation. |
| Databáze: | OpenAIRE |
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