Design of Band Engineered HgCdTe nBn Detectors for MWIR and LWIR Applications
| Autor: | Nima Dehdashti Akhavan, Lorenzo Faraone, Gilberto A. Umana-Membreno, Jarek Antoszewski, Gregory Jolley |
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| Rok vydání: | 2015 |
| Předmět: |
010302 applied physics
Materials science business.industry Band gap Doping Detector 02 engineering and technology Spectral bands 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Semiconductor detector chemistry.chemical_compound Optics chemistry 0103 physical sciences Optoelectronics Diffusion current Mercury cadmium telluride Electrical and Electronic Engineering 0210 nano-technology business Dark current |
| Zdroj: | IEEE Transactions on Electron Devices. 62:722-728 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | In this paper, we present a theoretical study of mercury cadmium telluride (HgCdTe)-based unipolar n-type/barrier/n-type (nBn) infrared (IR) detector structures for midwave IR and longwave IR spectral bands. To achieve the ultimate performance of nBn detectors, a bandgap engineering method is proposed to remove the undesirable valence band discontinuity that is currently limiting the performance of conventional HgCdTe nBn detectors. Our proposed band engineering method relies on simultaneous grading of the barrier composition and doping density profiles, leading to efficient elimination of the valence band discontinuity. This allows the detector to operate at | $V_{\mathrm {bias}}| mV, rendering all tunneling-related dark current components insignificant and allowing the detector to achieve the maximum possible diffusion current limited performance. |
| Databáze: | OpenAIRE |
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