Impact of argon ion implantation on CdS nanorod mesh

Autor:	Rishi Pal Chauhan, Jaya Khatter
Rok vydání:	2022
Předmět:	Photoluminescence Materials science Band gap Mechanical Engineering Analytical chemistry Hexagonal phase Condensed Matter Physics Cadmium sulfide chemistry.chemical_compound Ion implantation chemistry Mechanics of Materials General Materials Science Nanorod Thin film Chemical bath deposition
Zdroj:	Materials Letters. 307:131082
ISSN:	0167-577X
DOI:	10.1016/j.matlet.2021.131082
Popis:	Ion implantation is explored as potent approach for tuning the optoelectrical properties of semiconducting thin films via controlled defect engineering. This present study investigates the 180 keV argon (Ar+) ion implantation on the cadmium sulfide (CdS) nanorod mesh; synthesized via chemical bath deposition (CBD) method. X-ray diffraction (XRD) analysis supports the consistency of hexagonal phase even after implantation, but variation in the intensity of diffraction planes is noted. Field emission scanning electron microscopy (FESEM) scans are recorded to examine the implantation effect on the surface morphology. Implantation induces lattice disorder that resulted decrease in band gap energy from 2.39 eV to 2.08 eV and the corresponding green-yellow-red emission bands are discussed in photoluminescence (PL) spectra.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a51cd175dbbf37bc6c5d7bf5700727dd https://doi.org/10.1016/j.matlet.2021.131082 Zobrazit plný text záznamu Full Text from ScienceDirect