Short-Channel Top-Gate InGaZnO Thin-Film Transistors Fabricated With Boron Implantation Into Source/Drain Regions
| Autor: | Jun Tanaka, Kenji Sera, He Shui, Kazushige Takechi, Yong Yuan, Feipeng Lin |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
business.industry Transistor chemistry.chemical_element Scanning capacitance microscopy Acceleration voltage Electronic Optical and Magnetic Materials law.invention Ion implantation chemistry law Thin-film transistor Logic gate Optoelectronics Electrical and Electronic Engineering business Boron Layer (electronics) |
| Zdroj: | IEEE Transactions on Electron Devices. 68:4161-4163 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2021.3091420 |
| Popis: | In this brief, we discuss top-gate InGaZnO thin-film transistors (InGaZnO TFTs) fabricated with boron (B) implantation into the source–drain regions, focusing on channel shortening. B was implanted through the gate insulator into the InGaZnO layer. From scanning capacitance microscopy (SCM) analysis, we found that boron implantation in the S/D regions of InGaZnO TFTs induces channel shortening. We also found that such channel shortening is suppressed by optimizing acceleration voltage in the boron implantation process, leading to good operation in short-channel ( $1.5~\mu \text{m}$ ) InGaZnO TFT. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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