The Effect of the Ionizing Radiation Intensity on the Response of MOS Structures
| Autor: | O. V. Aleksandrov |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Hydrogen Silicon dioxide Annealing (metallurgy) Relaxation (NMR) Analytical chemistry Oxide chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Ion Ionizing radiation chemistry.chemical_compound Volume (thermodynamics) chemistry 0103 physical sciences 0210 nano-technology |
| Zdroj: | Semiconductors. 55:207-213 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782621020068 |
| Popis: | The effect of the intensity of ionizing radiation on the volume charge and surface-state density of metal—oxide—semiconductor (MOS) structures with thin gate silicon dioxide is modeled. It is shown that the dependences of the surface-state density and volume charge on the total time of ionizing radiation and subsequent annealing at different ionizing-radiation intensities lie on the corresponding common curves Nit(t) and Qot(t). The Nit(t) common curve is determined by the dispersive nature of the transport of hydrogen ions Н+. The observed deviations from this Nit(t) common curve immediately after the end of ionizing irradiation are due to the transient process of the redistribution of Н+ ions. The Qot(t) common curve is determined by relaxation of the volume charge from a system of levels with energies of 0.3 to 1.0 eV by the mechanism of thermal emission. It is shown that the enhanced low-dose-rate sensitivity (ELDRS) for the MOS structures with a thick base oxide at low intensities is determined by the dispersive character of the transport of hydrogen ions Н+. |
| Databáze: | OpenAIRE |
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