Low impedance gate drive for full control of voltage controlled power devices
| Autor: | Reinhold Bayerer, Saboor Riaz Suleri |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Electrical engineering NAND gate Hardware_PERFORMANCEANDRELIABILITY Overdrive voltage High impedance Current injection technique Hardware_INTEGRATEDCIRCUITS Electronic engineering Output impedance Voltage source business AND gate Hardware_LOGICDESIGN Negative impedance converter |
| Zdroj: | 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD). |
| DOI: | 10.1109/ispsd.2014.6856070 |
| Popis: | In order to have full control of voltage controlled, power devices gate voltages must be under control. This requires low impedance (R G and L G ) in gate drive circuits. A prototype of a gate drive circuits applied to an IGBT half-bridge module, results in L G of 2.5nH and gate resistance R G of 0.54 Ohm for a 400A/1200V IGBT module. Test results demonstrate the controllability of the gate voltage during switching, as well as during short circuit conditions. Due to improved control of gate voltage, short circuit current becomes lower by 30%. In order to allow low impedance in the gate drive circuit, switching slopes are adjusted by shaping the input signals to the gate drivers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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