Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer
Autor: | Xiangang Xu, Chun Feng, Quan Wang, Jiang Lijuan, Xiaoliang Wang, Meilan Hao, Cuimei Wang, Hongling Xiao, Changxi Chen, Zhanguo Wang, Fengqi Liu |
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Rok vydání: | 2018 |
Předmět: |
Delta
Materials science business.industry 010401 analytical chemistry Doping Transistor Algan gan 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Buffer (optical fiber) 0104 chemical sciences law.invention law Optoelectronics General Materials Science 0210 nano-technology business High electron Leakage (electronics) |
Zdroj: | Nanoscience and Nanotechnology Letters. 10:185-189 |
ISSN: | 1941-4900 |
Databáze: | OpenAIRE |
Externí odkaz: |