Photoconductivity of semi-insulating SiC:〈V,Al〉
| Autor: | V.P Rastegaev, S.A Reshanov |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Absorption spectroscopy Mechanical Engineering Photoconductivity Relaxation (NMR) Analytical chemistry Vanadium chemistry.chemical_element General Chemistry Electronic Optical and Magnetic Materials chemistry Impurity Electrical resistivity and conductivity Materials Chemistry Electrical and Electronic Engineering Absorption (electromagnetic radiation) Visible spectrum |
| Zdroj: | Diamond and Related Materials. 10:2035-2038 |
| ISSN: | 0925-9635 |
| Popis: | Temperature-dependent electrical resistivity, optical transmission and photoconductivity measurements of semi-insulating bulk SiC:〈V,Al〉 are reported. X-Ray spectral microanalysis was used to determine V, Ti, Cr impurity concentrations. Optical transmission measurements on semi-insulating material indicate the presence of absorption peaks at 1.13 and 1.26 eV, whose intensities correlate with the vanadium concentration level. A visible spectrum photoconductivity in semi-insulating SiC:〈V,Al〉 was discovered, possessing long-time relaxation: 10 2 –10 3 s at 300 K. |
| Databáze: | OpenAIRE |
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