Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation

Autor: Paul D. Franzon, Veena Misra, Biplab Sarkar, Narayanan Ramanan, Neil Di Spigna, Bongmook Lee, Srikant Jayanti
Rok vydání: 2014
Předmět:
Zdroj: IEEE Electron Device Letters. 35:48-50
ISSN: 1558-0563
0741-3106
DOI: 10.1109/led.2013.2289751
Popis: Dual floating gate flash memory has been fabricated and characterized to show dynamic operation, non-volatile operation, and simultaneous dynamic and non-volatile operation. The gate stack consists of a thin dielectric separating two floating gates sandwiched between a tunnel dielectric and interpoly dielectric. The quality of the thin dielectric that separates the floating gates is of utmost importance to retain dynamic operation. In this letter, we investigate a dual floating gate memory transistor and show its potential to combine DRAM and flash functionality in the same device.
Databáze: OpenAIRE