Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation
Autor: | Paul D. Franzon, Veena Misra, Biplab Sarkar, Narayanan Ramanan, Neil Di Spigna, Bongmook Lee, Srikant Jayanti |
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Rok vydání: | 2014 |
Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science business.industry Gate dielectric Hardware_PERFORMANCEANDRELIABILITY Flash memory Electronic Optical and Magnetic Materials Non-volatile memory Nano-RAM Hardware_GENERAL Logic gate Charge trap flash MOSFET Hardware_INTEGRATEDCIRCUITS Electronic engineering Optoelectronics Non-volatile random-access memory Hardware_ARITHMETICANDLOGICSTRUCTURES Electrical and Electronic Engineering business |
Zdroj: | IEEE Electron Device Letters. 35:48-50 |
ISSN: | 1558-0563 0741-3106 |
DOI: | 10.1109/led.2013.2289751 |
Popis: | Dual floating gate flash memory has been fabricated and characterized to show dynamic operation, non-volatile operation, and simultaneous dynamic and non-volatile operation. The gate stack consists of a thin dielectric separating two floating gates sandwiched between a tunnel dielectric and interpoly dielectric. The quality of the thin dielectric that separates the floating gates is of utmost importance to retain dynamic operation. In this letter, we investigate a dual floating gate memory transistor and show its potential to combine DRAM and flash functionality in the same device. |
Databáze: | OpenAIRE |
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