| Autor: |
Ju-Hyung Ha, Won-Jae Lee, Mi-Seon Park, Young Jun Choi, Hae-Yong Lee |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
Journal of the Korean Crystal Growth and Crystal Technology. 25:56-61 |
| ISSN: |
1225-1429 |
| DOI: |
10.6111/jkcgct.2015.25.2.056 |
| Popis: |
The effects of the growth temperature on the properties of a-plane GaN epi-layer on r-plane sapphire by HVPE were studied, when the constant V/III ratio and the flow rate of HCl for the Ga source channel was fixed at 10 and 700 sccm, respectively. Additionally the effects of V/III ratios for source gasses were studied when growth temperature and the flow rate of HCl for the Ga source channel was fixed at 1000 C and 700 sccm, respectively. As the growth temperature was increased, the values of Full Width Half Maximum (FWHM) for Rocking curve (RC) of a-plane GaN (11-20) epi- layer were decreased and thickness of a-plane GaN epi-layer were increased. As V/III ratios were increased at 1000 C, the values of FWHM for RC of a-plane GaN (11-20) were declined and thickness of a-plane GaN epi-layer were increased. The a-plane GaN (11-20) epi-layer grown at 1000 C and V/III ratio = 10 showed the lowest value FWHM for RC of a- plane GaN (11-20) for 734 arcsec and the smallest dependence of Azimuth angle for FWHM of (11-20) RCs. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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