Design of multi-threshold threshold gate using MOS-NDR circuits suitable for CMOS process
| Autor: | Jeng Jong Lu, Kwang-Jow Gan, Wen-Kuan Yeh, Chien Hsiung Huang, Chun Yi Guo |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry 020208 electrical & electronic engineering Transistor Resonant-tunneling diode Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 021001 nanoscience & nanotechnology Surfaces Coatings and Films law.invention CMOS Hardware and Architecture law Signal Processing Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Optoelectronics Compound semiconductor State (computer science) 0210 nano-technology business Cmos process Hardware_LOGICDESIGN Electronic circuit Voltage |
| Zdroj: | Analog Integrated Circuits and Signal Processing. 96:409-416 |
| ISSN: | 1573-1979 0925-1030 |
| DOI: | 10.1007/s10470-018-1156-y |
| Popis: | We demonstrate a multi-threshold threshold gate (MTTG) based on a series and parallel connection of several MOS-NDR circuits. A MOS-NDR circuit is made of five standard Si-based metal–oxide–semiconductor field-effect-transistor (MOS) devices. It can show the negative-differential-resistance (NDR) characteristic in its current–voltage (I–V) curve by adjusting suitable parameters for the MOS transistors. The operation principle of this MTTG is based on the monostable-bistable transition logic element (MOBILE), which the output voltage goes to the low or high state depending on the relative current-peak conditions of the series-connected NDR circuits by supplying a clocked voltage. The weight of this MTTG is defined by the gate width of the MOS device in the MOS-NDR circuit. It is different from the design using the area of the resonant tunneling diode as the weight in the other NDR-based MTTG circuit. A great advantage of this MOS-NDR-based MTTG is that we can design the application using the standard CMOS technology without the need of compound semiconductor. |
| Databáze: | OpenAIRE |
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