Fluorescence x-ray absorption fine structure study on local structures around Fe atoms heavily doped in GaN by low-temperature molecular-beam epitaxy
| Autor: | Yukiharu Takeda, M Tabuchi, Stefan Nemeth, J. De Boeck, Hiro Akinaga, Masaharu Oshima, Gustaaf Borghs, Hironori Ofuchi |
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| Rok vydání: | 2001 |
| Předmět: |
Condensed Matter::Materials Science
Materials science Physics and Astronomy (miscellaneous) Extended X-ray absorption fine structure Magnetic circular dichroism Doping Analytical chemistry Magnetic semiconductor XANES Electron cyclotron resonance X-ray absorption fine structure Molecular beam epitaxy |
| Zdroj: | Applied Physics Letters. 78:2470-2472 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.1368184 |
| Popis: | A local structural transition in heavily Fe-doped GaN films related to the magnetic properties has been revealed by fluorescence x-ray absorption fine structure (XAFS) analysis. The structural transition is explained (or considered to be induced) by the change in the degree of hybridization between Fe 3d and N 2p states, which can be evaluated by x-ray absorption near edge structure spectra. The XAFS analysis indicates that the present diluted magnetic semiconductor based on GaN can be fabricated by electron cyclotron resonance microwave plasma-assisted low-temperature molecular-beam epitaxy. |
| Databáze: | OpenAIRE |
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