Study and Improvement on Tungsten Recess in CMP Process

Autor:	Lei Zhang, Jingxun Fang, Yefang Zhu
Rok vydání:	2019
Předmět:	0209 industrial biotechnology Materials science Metallurgy chemistry.chemical_element Polishing 02 engineering and technology Tungsten Alkali metal Electrochemistry Corrosion law.invention 020901 industrial engineering & automation chemistry law Chemical-mechanical planarization Slurry Spark plug
Zdroj:	2019 China Semiconductor Technology International Conference (CSTIC).
DOI:	10.1109/cstic.2019.8755665
Popis:	Serious tungsten recess after tungsten chemical mechanical planarization (W CMP) is found to correlate to the high via resistance. Electrochemical alteration means oxidation and corrosion of tungsten surface, and recess is strongly dependent on via hold size. In this paper, the low corrosion W polishing slurry, alkali/acidic buffing slurry effect on tungsten plug are analyzed. The result shows that the low corrosion W slurry and acidic chemical can realize tungsten plug recess free.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a4f765e0ba1c74ad9b2a2e8581b6c689 https://doi.org/10.1109/cstic.2019.8755665 Zobrazit plný text záznamu