Ka-band InP high electron mobility transistor monolithic microwave integrated circuit reliability
| Autor: | Adele E. Schmitz, R.H. Walden, Loi D. Nguyen, Kenny C. Hum, Richard C. Wong, B.M. Paine, Michael J. Delaney |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
education.field_of_study
Materials science business.industry Population Electrical engineering High-electron-mobility transistor Integrated circuit Condensed Matter Physics Noise figure Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Capacitor law Optoelectronics Electrical and Electronic Engineering Safety Risk Reliability and Quality business education Monolithic microwave integrated circuit DC bias Electronic circuit |
| Zdroj: | Microelectronics Reliability. 41:1115-1122 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/s0026-2714(01)00083-x |
| Popis: | The reliability of AlInAs/GaInAs high electron mobility transistor (HEMT) monolithic microwave integrated circuits on InP substrates from HRL Labs has been studied with elevated-temperature lifetests on Ka-band LNAs, as well as ramped-voltage tests on individual capacitors. In the lifetests the LNAs were put under normal DC bias, and aging was accelerated by heating to channel temperatures of 190°C and 210°C. Room-temperature characterizations involved DC tests of HEMT parameters as well as 30 GHz measurements of gain, noise figure and phase. Aging caused the noise figure to drop by a few tenths of a dB, and the phase changed by ±10°. The gain dropped gradually by several dB. Taking 1 dB drop in gain as the failure criterion, we find an activation energy of 1.1 eV, and a mean time to failure (MTTF) at an operating channel temperature of 70°C of 7×106 h. In the ramped-voltage tests, 10×10 μm 2 capacitors were taken to breakdown at two different temperatures, and several ramp rates. This yielded a voltage acceleration factor of γ=36–39 nm/V, and thermal activation energy of 0.11–0.13 eV. Next, ramped voltage tests were conducted on 200×200 μm 2 capacitors, typical of those in circuits. These were done at 25°C and 3.0 V/s only, and at least 1000 specimens were tested per wafer. The known acceleration factors were used to find the MTTFs at 70°C, with operating biases of 5 or 10 V. For the majority of the population the MTTFs are about 109 h, while only 0.07% of the population has MTTF less than 1×106 h. The combination of results from elevated-temperature lifetests and ramped-voltage capacitor tests indicates excellent reliability for this MMIC technology in terms of known “wearout” failure mechanisms. |
| Databáze: | OpenAIRE |
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