Growth of novel broadband high reflection mirrors by molecular beam epitaxy

Autor:	Ursula Keller, Hans Zogg, Silke Schön
Rok vydání:	1999
Předmět:	business.industry Chemistry Surface finish Condensed Matter Physics Distributed Bragg reflector Flattening Inorganic Chemistry Optics Broadband Materials Chemistry Specular reflection Thin film business Refractive index Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. :1020-1023
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(99)00033-0
Popis:	Novel broadband (Ga,Al)As/CaF2 Bragg mirrors have been grown on Si(1 1 1) substrates for the first time providing large reflectance bandwidth due to a high ratio of refractive indices. Two types of interface morphology have been observed: a rough one when growing (Ga,Al)As on CaF2 and a smooth one when growing CaF2 on (Ga,Al)As. The effect of surface flattening due to CaF2 overgrowth of (Ga,Al)As prevented the accumulation of interface roughness and provided a smoother surface of the top layer compared to that obtained from (1 0 0) oriented growth. Specular highly reflecting surfaces have been obtained showing no cracks. An absolute reflectance as high as 98% have been determined for a four pair Bragg mirror.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a4f442199a7d9663ab1ee3274e533864 https://doi.org/10.1016/s0022-0248(99)00033-0 Zobrazit plný text záznamu Full Text from ScienceDirect