Autor:	V.S. Belov
Rok vydání:	2020
Předmět:	Materials science Control and Systems Engineering Metallurgy Tantalum oxide Electrical and Electronic Engineering
Zdroj:	Nano- i Mikrosistemnaya Tehnika. 22:433-437
ISSN:	1813-8586
Popis:	In this work has been developed a technology for obtaining nickel-insulator-aluminum structure with 7 nm thick tantalum oxide deposited by atomic-layer deposition. An asymmetric current-voltage characteristic of the structure is obtained, and the heights of potential barriers at the metal-insulator interface are determined. The permittivity of the tantalum oxide film has been determined experimentally in this work.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a4eb5a65c3933cc981083e4bd98ab2e1 https://doi.org/10.17587/nmst.22.433-437 Zobrazit plný text záznamu