Characterization of Ti diffusion in PVD deposited WTi/AlCu metallization on monocrystalline Si by means of secondary ion mass spectroscopy
| Autor: | Mathias Plappert, Mathias Nowottnick, Oliver Humbel, Angelika Koprowski |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Diffusion barrier Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Activation energy Sputter deposition Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Secondary Ion Mass Spectroscopy Monocrystalline silicon chemistry Electrical and Electronic Engineering Safety Risk Reliability and Quality Titanium |
| Zdroj: | Microelectronics Reliability. 52:1993-1997 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2012.06.066 |
| Popis: | The diffusion behavior of Titanium in Al0.5Cu/W18Ti (at.%) metallization stacks on monocrystalline Silicon has been investigated. The metallization system was prepared by in situ sputtering deposition. It is demonstrated that WTi is not stable as a diffusion barrier between Al0.5Cu and Si in temperature ranges between 623 K and 673 K due to Ti depletion. The Ti diffusion in Al0.5Cu is characterized by diffusion profiles prepared by secondary ion mass spectroscopy after annealing. The activation energy derived from this data is 2.28 eV for Ti diffusion into Al0.5Cu. The causal chain of detecting this behavior is described application-oriented. |
| Databáze: | OpenAIRE |
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