Copper iodide synthesized by iodization of Cu-films and deposited using MOCVD
Autor: | Steffen Blaurock, Marius Grundmann, Volker Gottschalch, Harald Krautscheid, Gabriele Benndorf, Jörg Lenzner |
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Rok vydání: | 2017 |
Předmět: |
010302 applied physics
Photoluminescence Materials science Inorganic chemistry chemistry.chemical_element 02 engineering and technology Chemical vapor deposition Combustion chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Chemical reaction Copper Inorganic Chemistry chemistry 0103 physical sciences Materials Chemistry Metalorganic vapour phase epitaxy Crystallite Thin film 0210 nano-technology |
Zdroj: | Journal of Crystal Growth. 471:21-28 |
ISSN: | 0022-0248 |
DOI: | 10.1016/j.jcrysgro.2017.04.033 |
Popis: | We report the thin film deposition of copper iodide with zincblende type structure (γ-CuI) via metal-organic chemical vapor deposition (MOCVD). Single crystals and thin films of Cu and γ-CuI could be formed on various substrates from cyclopentadienylcopper triethylphosphine (CpCuPEt 3 ) and ethyliodide (C 2 H 5 I) as precursors for copper and iodine, respectively. Additionally, the chemical reaction behavior of thermally evaporated and MOCVD deposited elemental copper films with C 2 H 5 I is examined. SiO 2 glass and various single crystalline oxides and semiconductors were used as substrates. For all cases X-ray diffraction measurements revealed polycrystalline γ-CuI with zincblende type structure; other CuI phases could not be detected. Photoluminescence measurements show a broadened peak at 420 nm due to donor-acceptor pair recombination. Intense peaks at shorter wavelengths are attributed to excitonic emissions. |
Databáze: | OpenAIRE |
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