Microscopic properties of H2 in Si from the dependence of the 3618.4cm−1 line on temperature and stress
| Autor: | E Elinor Chen, J. Anna Zhou, Michael Stavola |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Condensed matter physics Hydrogen business.industry Infrared spectroscopy chemistry.chemical_element Triclinic crystal system Condensed Matter Physics Symmetry (physics) Electronic Optical and Magnetic Materials Intensity (physics) Stress (mechanics) Optics chemistry Orientation (geometry) Electrical and Electronic Engineering business Line (formation) |
| Zdroj: | Physica B: Condensed Matter. :200-203 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/s0921-4526(99)00445-7 |
| Popis: | The dependence of the 3618.4 cm −1 line assigned to interstitial H 2 in Si on temperature and stress has been studied to probe the structure and microscopic properties of this defect. The H 2 (and D 2 ) stretching lines broaden and shift to lower frequency with increasing temperature while the integrated intensity remains approximately constant. Uniaxial stress results are consistent with triclinic (C 1 ) symmetry and suggest a near 〈1 0 0〉 orientation for the H 2 molecular axis. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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