Inverse polarity of the resistive switching effect and strong inhomogeneity in nanoscale YBCO-metal contacts
Autor: | A. Plecenik, Mikhail Belogolovskii, M. Truchly, Tomas Plecenik, Peter Kúš, Mária Dvoranová, Elena Zhitlukhina |
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Rok vydání: | 2016 |
Předmět: |
Materials science
Spreading resistance profiling Condensed matter physics Polarity (physics) General Physics and Astronomy Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Effective nuclear charge law.invention Scanning probe microscopy Electrical resistivity and conductivity law 0103 physical sciences Microscopy Scanning tunneling microscope Thin film 010306 general physics 0210 nano-technology |
Zdroj: | Journal of Applied Physics. 120:185302 |
ISSN: | 1089-7550 0021-8979 |
DOI: | 10.1063/1.4967392 |
Popis: | We have studied a bipolar resistive switching phenomenon in c-axis oriented normal-state YBa2Cu3O7-c (YBCO) thin films at room temperature by scanning spreading resistance microscopy (SSRM) and scanning tunneling microscopy (STM) techniques. The most striking experimental finding has been the opposite (in contrast to the previous room and low-temperature data for planar metal counter-electrode-YBCO bilayers) voltage-bias polarity of the switching effect in all SSRM and a number of STM measurements. We have assumed that the hysteretic phenomena in current-voltage characteristics of YBCO-based contacts can be explained by migration of oxygen-vacancy defects and, as a result, by the formation or dissolution of more or less conductive regions near the metal–YBCO interface. To support our interpretation of the macroscopic resistive switching phenomenon, a minimalist model that describes radical modifications of the oxygen-vacancy effective charge in terms of a charge-wind effect was proposed. It was shown theo... |
Databáze: | OpenAIRE |
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