Study of the influence of treatment on the strength of undoped indium antimonide single-crystal plates

Autor: Svetlana S. Kormilitsina, Yu. V. Syrov, E. V. Zharikova, R. Yu. Kozlov, S. N. Knyzev, D. A. Zavrazhin, Elena V. Molodtsova
Rok vydání: 2021
Předmět:
Zdroj: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 24:48-56
ISSN: 2413-6387
1609-3577
Popis: The method of plane-transverse bending was used to measure the strength of thin single-crystal plates of undoped InSb with a crystallographic orientation of (100). It was found that the strength of the plates (thickness ≤ 800 μm) depends on their processing. Using a full processing cycle (grinding and chemical polishing) allows to increase the strength of InSb plates by 2 times (from 3.0 to 6.4 kg/mm2). It is shown that the dependence of strength on processing for wafers with (100) orientation is similar to this dependence for wafers (111), while the strength of wafers (111) is 2 times higher. The contact profilometry method was used to measure the roughness of thin plates, which also passed successive processing steps. It was found that during a full cycle of processing, the roughness of InSb plates decreases (Ra from 0.6 to 0.04 μm), leading to a general smoothing of the surface roughness. The strength and roughness of the (100) InSb and GaAs wafers are compared. It was found that the strength of GaAs cut wafers is 2 times higher than the strength of InSb cut wafers and slightly increases after a full cycle of their processing. It was shown that the roughness of GaAs and InSb plates after a full cycle of surface treatment is significantly reduced: 10 times for InSb due to overall surface leveling and 3 times for GaAs (Rz from 2.4 to 0.8 μm) due to a decrease in the peak component. Conducting a full cycle of processing InSb plates can increase their strength by removing broken layers by sequential operations and reducing the risk of mechanical damage.
Databáze: OpenAIRE
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