Optimized Process Conditions for High Quality Gate Oxides on SIMOX SOI Substrates
| Autor: | Jin‐ho Seo, W. P. Maszara, Jason C. S. Woo |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Materials science
Low oxygen Renewable Energy Sustainability and the Environment business.industry Electrical engineering Silicon on insulator Surface finish Condensed Matter Physics Layer thickness Surfaces Coatings and Films Electronic Optical and Magnetic Materials Process conditions Materials Chemistry Electrochemistry Surface roughness Optoelectronics business Early failure |
| Zdroj: | Journal of The Electrochemical Society. 146:281-285 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.1391600 |
| Popis: | The quality of thin gate oxides grown on separation‐by‐implantation‐of‐oxygen silicon‐on‐insulator (SIMOX SOI) was investigated. The early‐failure‐rate of gate oxides in optimized SIMOX SOI has been as low as in bulk reference samples. Samples with low oxygen dose and relatively slow (1°C/min) postimplantation anneal ramp‐up rate exhibited the best gate oxides. Surface roughness (up to 1 nm with 20 × 20 μm scanned area) and SOI film thickness (150–230 nm) showed almost no impact on the early failure rate of the gate oxides on SIMOX SOI. © 1999 The Electrochemical Society. All rights reserved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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