Applying the in situ X-ray reflectometry method to define the nanodimensional silicon film parameters
| Autor: | A. A. Egorov, E. G. Novoselova, I. S. Monakhov, I. S. Smirnov |
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| Rok vydání: | 2014 |
| Předmět: |
In situ
Materials science Silicon business.industry X-ray chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Cavity magnetron Materials Chemistry Deposition (phase transition) Optoelectronics Monitoring methods Electrical and Electronic Engineering Reflectometry business |
| Zdroj: | Russian Microelectronics. 43:587-589 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1134/s1063739714080125 |
| Popis: | The monitoring methods for measuring the film structure parameters in formation process, namely, the in situ methods, are currently of special significance. Their application provides obtaining the films with the given characteristics, which results in a fast correction of the technological modes. The possibilities of the in situ method of the X-ray reflectometry for defining the parameters of the nanodimensional films during their formation are discussed. The results are given of testing the magnetron deposition of the silicon films and other materials on the silicon substrate. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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