Evidence of very strong inter-epitaxial-layer diffusion in Zn-doped GaInPAs/InP structures

Autor:	C. J. Pinzone, S. W. Downey, A. B. Emerson, Erdmann Frederick Schubert
Rok vydání:	1995
Předmět:	Diffusion transport Chemistry Semiconductor materials Inorganic chemistry Analytical chemistry General Materials Science Redistribution (chemistry) General Chemistry Zn doped Epitaxy Zn doping Group 2 organometallic chemistry
Zdroj:	Applied Physics A Materials Science & Processing. 60:525-527
ISSN:	1432-0630 0947-8396
DOI:	10.1007/bf01538523
Popis:	Zn-doped InP and GaInPAs layers were grown by OrganoMetallic Vapor-Phase Epitaxy (OMVPE). The epitaxial films consist of a primary GaInPAs/InP epitaxial layer and a secondary InP/GaInAs epitaxial layer. We present evidence that the redistribution of Zn acceptors in the primary epitaxial layer is strongly influenced by the Zn doping concentration in the secondary epitaxial layer. Rapid redistribution of Zn acceptors in the primary epitaxial layer occurs if the Zn doping concentration in the secondary epitaxial layer exceeds a critical concentration ofNZn≅3×1018cm−3. The influence of the growth temperature on this effect is also presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a4c02625d66b69f91dd3a9d22fb75e53 https://doi.org/10.1007/bf01538523 Zobrazit plný text záznamu Full text from SpringerLink