A 15.5 W Si-LDMOS Balanced Power Amplifier with 53% Ultimate PAE for High Speed LTE

Autor:	Raed A. Abd-Alhameed, Abubakar Sadiq Hussaini, Steve M. R. Jones, R. W. Clark, B. A. Mohammed, Khalid W. Hameed, N. A. Abduljabbar, F. Elmegri, Mohammed A. G. Al-Sadoon
Rok vydání:	2017
Předmět:	LDMOS Orthogonal frequency-division multiplexing Frequency band Computer science Amplifier Baseband Electronic engineering Device under test Linearity Transceiver
Zdroj:	Wireless and Satellite Systems ISBN: 9783319538495 WISATS
DOI:	10.1007/978-3-319-53850-1_19
Popis:	In this paper, a 15.5 W Si-LDMOS balanced power amplifier (PA) technique operating in the 2.620–2.690 GHz frequency band for LTE systems is presented. The amplifier was designed using large signal Si-LDMOS models, which demonstrated saturation P1dB of 41 dBm and 53% PAE. The AM-AM and AM-PM measured data of the balanced amplifier is extracted and embedded in the device under test (DUT) based on IEEE 802.16 OFDM WLAN Transceiver system. A simple linear model was design for behavioral modelling of memory-less baseband digital pre-distorter. The nonlinearity of the balanced amplifier has been compensated using the Simulink version R2011a.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a4c00a5cf7c304c6463676f582e02202 https://doi.org/10.1007/978-3-319-53850-1_19 Zobrazit plný text záznamu