Evaluation of interfacial structure of [111] and [001] oriented epitaxial NiO layers on GaAs substrate by non-destructive techniques
Autor: | Arijeet Das, R.K. Sharma, Sanjay Rai, M. K. Swami, S. D. Singh, H. S. Patel, U. K. Goutam, Tapas Ganguli |
---|---|
Rok vydání: | 2019 |
Předmět: |
010302 applied physics
Materials science business.industry Non-blocking I/O Recrystallization (metallurgy) Claudetite Heterojunction 02 engineering and technology Partial pressure engineering.material 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Surfaces Coatings and Films Non destructive 0103 physical sciences engineering Optoelectronics 0210 nano-technology business Instrumentation Monoclinic crystal system |
Zdroj: | Vacuum. 159:335-340 |
ISSN: | 0042-207X |
DOI: | 10.1016/j.vacuum.2018.10.030 |
Popis: | The interface at NiO and GaAs heterojunction is found to have claudetite phase of As2O3 with monoclinic structure, which increases with oxygen (O2) partial pressure. It is determined that rough interface, caused by recrystallization of GaAs surface along [111] direction, is not the main governing factor for the observed change in growth direction for NiO epitaxial layer from [111] to [001] direction with increase in O2 partial pressure. The out-of-plane and in-plane epitaxial relationships of [111] oriented NiO layer with respect to substrate are [111]NiO || [001]GaAs, [-1-12]NiO || [-1-10]GaAs and [-110]NiO || [-110]GaAs. The interfacial structure of NiO/GaAs heterojunction thus determined can have implications into the characteristics of optoelectronic devices based on this heterojunction. |
Databáze: | OpenAIRE |
Externí odkaz: |