Novel HgxCd1−xTe device structure for higher operating temperature detectors
| Autor: | Neil Gordon, C. T. Elliott, R. A. Catchpole, L. G. Hipwood, C. D. Maxey, C. L. Jones, M. K. Ashby |
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| Rok vydání: | 2003 |
| Předmět: |
Physics
business.industry Photodetector Condensed Matter Physics Noise (electronics) Electronic Optical and Magnetic Materials Optics Operating temperature Materials Chemistry Rectangular potential barrier Optoelectronics Quantum efficiency Infrared detector Electrical and Electronic Engineering business p–n junction Diode |
| Zdroj: | Journal of Electronic Materials. 32:667-671 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-003-0050-1 |
| Popis: | A novel detector structure in which photons are absorbed in narrow-gap material, but the junction lies in wider bandgap material, has been examined. A possible reduction in bulk 1/f noise by a factor of 33 for a 240 K operation was predicted, based on studies that have suggested that the source of 1/f noise is the p-n junction and the large reduction in 1/f noise, which is observed in conventional detectors when the bandgap is increased. The increased bandgap at the junction produces a potential barrier; however, calculations are presented showing that for T > 150 K the thermal energy of the electrons enables them to cross the barrier and reach the p-n junction before recombining in the active region, thus giving high quantum efficiency. Experiments performed on the diodes showed that the quantum efficiency was maintained as expected, but the 1/f noise was not reduced, suggesting that it does not originate at the p-n junction. However, the structure does give excellent reverse-bias characteristics with low breakdown even at 2-V reverse bias. |
| Databáze: | OpenAIRE |
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