Effect of the Si wafer pretreatment on the patterned substrate morphology and growth of Hg 1−x Cd x Te PLD films
| Autor: | S. V. Svechnikov, E. F. Venger, T.Ya. Gorbach, L. A. Matveeva, G. Wisz, Marian Kuzma, R.Yu. Holiney |
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| Rok vydání: | 2000 |
| Předmět: |
Morphology (linguistics)
Materials science Silicon Scanning electron microscope Mechanical Engineering Analytical chemistry chemistry.chemical_element Condensed Matter Physics Pulsed laser deposition Crystallinity chemistry Mechanics of Materials General Materials Science Wafer Spectroscopy Deposition (law) |
| Zdroj: | Materials Science and Engineering: B. 71:288-291 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/s0921-5107(99)00392-x |
| Popis: | Silicon patterned substrates and Hg 1-x Cd x Te films prepared by pulse laser deposition (PLD) on these substrates were examined by scanning electron microscopy (SEM), electronography (EG) and low-field electroreflectane (ER) spectroscopy in dependence on a pretreatment of Si wafers and the microrelief type. Change in morphologies of the substrates and films is discussed. The crystallinity data and analysis of ER spectra parameters are presented. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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