Design Considerations for Patterned Wafer Bonding

Autor:	Kyu−Chil Park, Jun Hee Lee, Il Kwon Kim, Wan D. Kim, Byoung Hun Lee, Sang I. Lee, Giho Cha, Kyung Wook Lee, Gum J. Bae, Young Bum Koh
Rok vydání:	1997
Předmět:	Void (astronomy) Wire bonding Materials science Silicon Wafer bonding business.industry General Engineering General Physics and Astronomy chemistry.chemical_element Silicon on insulator Thermocompression bonding chemistry Anodic bonding Optoelectronics Wafer business
Zdroj:	Japanese Journal of Applied Physics. 36:1912
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.36.1912
Popis:	In patterned wafer bonding process, the debonded area occurring at bonding interface results from the poor wafer flatness of patterned wafer or from the different bonding speed in each position of the wafer. By reducing pressure when bonding occurs and by using interlayer films, we observed that the bondability of the patterned wafers enhances. In such a case, the result was also experimentally proved to be effective for the suppression of particles. In order to obtain the accurate alignment of the bonded wafers we specially designed a vacuum bonding machine, which has a function of self-controlled alignment mechanism (Rotating angle of
Databáze:	OpenAIRE
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