Low-leakage p-type diamond Schottky diodes prepared using vacuum ultraviolet light/ozone treatment

Autor:	Tokuyuki Teraji, Yiuri Garino, Yasuo Koide, Toshimichi Ito
Rok vydání:	2009
Předmět:	Materials science business.industry Schottky barrier General Physics and Astronomy Schottky diode Diamond Semiconductor device engineering.material Selective surface Semiconductor engineering Optoelectronics business Ohmic contact Diode
Zdroj:	Journal of Applied Physics. 105:126109
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.3153986
Popis:	Room-temperature fabrication of Schottky diodes was demonstrated for p-type boron-doped diamond. This fabrication method’s key technique is selective modification of surface termination from monohydride into oxygen groups using vacuum ultraviolet light irradiation in oxygen. The Au contacts, formed on the hydrogen-terminated surface, maintained Ohmic properties after this selective surface oxidation. The Au contacts then deposited on the oxidized surface, imparting Schottky properties. The lateral-type diodes comprising Au Schottky contacts and Au Ohmic contacts showed blocking voltage higher than 1 kV without electrode guarding. The leakage current at 1 kV was as low as 30 pA.
Databáze:	OpenAIRE
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