Deposition of highly c-axis-oriented ScAlN thin films at different sputtering power
| Autor: | Tai Zhiwei, Tang Jialin, Niu Dongwei, Hu Xianwei |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Surface acoustic wave chemistry.chemical_element 02 engineering and technology Substrate (electronics) Sputter deposition Nitride 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Piezoelectricity Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry Sputtering 0103 physical sciences Optoelectronics Electrical and Electronic Engineering Thin film 0210 nano-technology business |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 28:5512-5517 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-016-6213-7 |
| Popis: | Highly c-axis-oriented (002) of ScxAl1−xN thin films with high Sc concentration (x) have drawn a significant attention in the bulk acoustic wave (BAW) and surface acoustic wave (SAW) resonators because of their excellent piezoelectric performance. This paper presents the preparation and characterization of 15% scandium doped aluminum nitride (ScAlN) and pure AlN films on the silicon substrate with variable of sputtering power from 100 to 160 W. The crystalline degree, surface morphology and piezoelectric response prepared by RF magnetron sputtering are investigated by corresponding technologies. It shows that the best growth of characteristic peaks (002) and surface morphology for Sc0.15Al0.85N films are deposited at 135 W. Meanwhile, the piezoelectric response of Sc0.15Al0.85N is generally enhanced for two times larger than that of pure AlN films. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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