LOW TEMPERATURE FABRICATION AND PHYSICAL PROPERTIES OF 5 at.% Ga-DOPED ZnO FILMS FOR TRANSPARENT ELECTRODE APPLICATIONS

Autor:	Sung-Yool Choi, Ji-Hong Jung, Jin-Hyo Boo, Eunkyoung Nam, Jeong Won Kim, Jae Sang Cha, Young-Sung Kim, Donggeun Jung, Young Hun Kang, Choon-Gi Choi
Rok vydání:	2010
Předmět:	Materials science business.industry Sputtering Doping Optoelectronics General Materials Science Substrate (electronics) Sputter deposition Thin film business Nanocrystalline material Sheet resistance Transparent conducting film
Zdroj:	Functional Materials Letters. :101-105
ISSN:	1793-7213 1793-6047
DOI:	10.1142/s1793604710001032
Popis:	Transparent conductive 5 at.% Ga -doped ZnO (GZO) thin films are deposited on a glass substrate by an asymmetrical bipolar-pulsed DC magnetron sputtering at various substrate temperatures. All the GZO films have nanocrystalline structure and compact surface morphology. A highly c-axis oriented GZO film was grown perpendicular to the substrate at the 200C. The measured work function of GZO film deposited at 200°C shows slightly lower value of 4.37 eV than a commercial ITO film of 4.6 eV. The GZO film showed the lowest sheet resistance of 35 Ω/□, a carrier concentration of 1.2 ×1021 cm -3, a mobility of 9.9 cm2/Vs, and high optical transmittance of over 85% in the visible range. It indicates that the GZO films at 200°C can be promising as an alternative to ITO thin film for transparent electrode applications.
Databáze:	OpenAIRE
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