Properties of Mg doped GaAs grown by molecular beam epitaxy
| Autor: | J. Y. Leem, Jong Su Kim, J.I. Lee, S. K. Noh, Sang-Hyo Kim, In-Ho Bae, J. S. Son, Minhyon Jeon |
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| Rok vydání: | 2001 |
| Předmět: |
Photoluminescence
Reflection high-energy electron diffraction Chemistry Band gap Doping Analytical chemistry Mineralogy Condensed Matter Physics Epitaxy Acceptor Inorganic Chemistry Condensed Matter::Materials Science Hall effect Condensed Matter::Superconductivity Materials Chemistry Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 226:52-56 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/s0022-0248(01)01364-1 |
| Popis: | We present the optical and electrical properties of Mg doped GaAs epitaxial layer with various doping levels grown by molecular beam epitaxy (MBE). The double crystal X-ray diffraction measurement combined with carrier concentration results showed that high quality GaAs epitaxial layer was grown by MBE, even at high doping level. The maximum attainable doping density was N A − N D =1.2×10 20 cm −3 , which is the highest value known so far. Photoluminescence, results indicate broadening in line-width and redshift in Mg related peak positions with increase in carrier concentration. These results could be explained by the overlap of acceptor wave functions and many-body interactions mainly by bandgap renormalization. |
| Databáze: | OpenAIRE |
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