Microstructural study of growth of a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x trilayered film by pulsed laser deposition
Autor: | A. Staton-Bevan, Y. Li, Z. Trajanovic, J. A. Kilner, Thirumalai Venkatesan |
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Rok vydání: | 1996 |
Předmět: |
Materials science
business.industry Mechanical Engineering Nucleation Analytical chemistry Condensed Matter Physics Microstructure Epitaxy Pulsed laser deposition Tetragonal crystal system Mechanics of Materials Optoelectronics General Materials Science Thin film business High-resolution transmission electron microscopy Stacking fault |
Zdroj: | Journal of Materials Research. 11:2971-2975 |
ISSN: | 2044-5326 0884-2914 |
DOI: | 10.1557/jmr.1996.0378 |
Popis: | The growth process of a YBCO/LaAlO3/YBCO trilayered film made by pulsed laser deposition has been studied by high resolution transmission electron microscopy (HRTEM). The high resolution images of the cross-section samples have shown that a 7 nm layer of LaAlO3 has been grown epitaxially between c-axis oriented YBCO layers having the nominal thickness of 250 nm. A stacking fault in the LaAlO3 layer may introduce a stacking fault into the YBCO layer, which may form nucleation sites for α-axis oriented grains. A second phase had been formed at the interface between the LaAlO3 layer and the lower YBCO layer, which has been identified by image simulation and energy dispersive x-ray (EDX) analysis as a new tetragonal La–Al–Cu–O phase based on LaAlO3 in which some of Al atoms have been replaced by Cu. The approximate lattice parameters of the new phase are a = 0.38 nm and c = 0.76 nm. However, no second phase was found at the interface between the lower YBCO layer and the LaAlO3 substrate. |
Databáze: | OpenAIRE |
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