Low write current and strong durability in high-speed spintronics memory (spin-Hall MRAM and VoCSM) through development of a shunt-free design process and W spin-Hall electrode
| Autor: | Atsushi Kurobe, Katsuhiko Koi, Satoshi Shirotori, Soichi Oikawa, Keiko Fujii, Yuichi Ohsawa, Yushi Kato, Tomoaki Inokuchi, B. Altansargai, Hideyuki Sugiyama, Hiroaki Yoda, Naoharu Shimomura, Mariko Shimizu, Masahiko Yoshiki |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Magnetoresistive random-access memory Materials science Spintronics Write current business.industry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Durability Electronic Optical and Magnetic Materials Non-volatile memory 0103 physical sciences Electrode Optoelectronics Design process 0210 nano-technology business Shunt (electrical) |
| Zdroj: | Journal of Magnetism and Magnetic Materials. 491:165536 |
| ISSN: | 0304-8853 |
| Popis: | We investigated a voltage-control spintronics memory (VoCSM) with a shunt-free design process and W spin-Hall electrode. We successfully reduced the write current to 62 μA at a 5-ns write pulse (48 μA at a 20-ns write pulse), utilizing a high spin-Hall efficiency by developing the shunt-free design process and optimized W spin-Hall electrode. Moreover, the device was very reliable, exhibiting properties such as a low write error rate ( 1 × 1012 cycles). The spin-Hall MRAM and VoCSM with the shunt-free design process and W spin-Hall electrode could lead to high-speed nonvolatile memory with low power consumption and high durability. |
| Databáze: | OpenAIRE |
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