Delay analysis of high-electron mobility transistors under high drain bias
| Autor: | Helmut Brech, Korbinian Reiser, Robert Weigel, John Twynam |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Transistor Delay analysis Gallium nitride High-electron-mobility transistor Condensed Matter Physics Cutoff frequency Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Materials Chemistry Optoelectronics Electrical and Electronic Engineering business High electron |
| Zdroj: | Semiconductor Science and Technology. 35:055014 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/1361-6641/ab78f5 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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