Studies on the recombination of electrons and holes in germanium

Autor:	S.G. Kalashnikov
Rok vydání:	1959
Předmět:	Range (particle radiation) Chemistry Life time Non-equilibrium thermodynamics chemistry.chemical_element General Materials Science Charge carrier Germanium General Chemistry Electron Atomic physics Condensed Matter Physics Recombination
Zdroj:	Journal of Physics and Chemistry of Solids. 8:52-59
ISSN:	0022-3697
DOI:	10.1016/0022-3697(59)90273-2
Popis:	The life time of nonequilibrium charge carriers in n - and p -type germanium was measured as a function of the equilibrium carrier concentrations. Tne concentration range from the intrinsic region up to ≈10 18 cm −3 was covered. Both electron and hole capture coefficients were found to be independent of concentration up to the concentrations of at least ≈10 17 cm −3 . The temperature dependence of the hole life times in copper-doped n -type germanium was investigated. The experimental data were compared with the statistics of recombination on many-level centres and a good agreement was shown to be obtainable. From the data obtained some conclusions on the nature of elementary capture processes in germanium were drawn.
Databáze:	OpenAIRE
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